发明授权
- 专利标题： Exposure method and device manufacturing method
- 专利标题（中）： 曝光方法和装置制造方法
-
申请号： US11632855申请日： 2005-07-20
-
公开(公告)号： US07914972B2公开(公告)日： 2011-03-29
- 发明人: Tomoharu Fujiwara , Hiroyuki Nagasaka
- 申请人： Tomoharu Fujiwara , Hiroyuki Nagasaka
- 申请人地址： JP Tokyo
- 专利权人： Nikon Corporation
- 当前专利权人： Nikon Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2004-212756 20040721; JP2005-190728 20050629
- 国际申请： PCT/JP2005/013311 WO 20050720
- 国际公布： WO2006/009169 WO 20060126
- 主分类号： G03F7/20
- IPC分类号： G03F7/20
摘要：
An exposure method is provided in which a substrate is favorably exposed in a state with a liquid being retained in a desired condition. An upper surface (1A) of a base material (1) that is used as the substrate (P) to be exposed via the liquid has an effective region (4) coated with a photosensitive material (2), and at least part of the surface of the base material (1) is coated with a first material (3) such that the surface of the base material (1) does not come into contact with the liquid on an outside of the effective region (4).
公开/授权文献
- US20070196774A1 Exposure Method And Device Manufacturing Method 公开/授权日：2007-08-23
信息查询
IPC分类:
