发明授权
- 专利标题： Read state retention circuit and method
- 专利标题（中）： 读取状态保持电路和方法
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申请号： US11889695申请日： 2007-08-15
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公开(公告)号： US07913907B2公开(公告)日： 2011-03-29
- 发明人: Sterling Smith , Chung-Ho Ning
- 申请人： Sterling Smith , Chung-Ho Ning
- 申请人地址： TW Hsinchu Hsien
- 专利权人： Mstar Semiconductor, Inc.
- 当前专利权人： Mstar Semiconductor, Inc.
- 当前专利权人地址： TW Hsinchu Hsien
- 代理机构： Rabin & Berdo, P.C.
- 优先权： TW95146943A 20061214
- 主分类号： G06K7/10
- IPC分类号： G06K7/10
摘要：
A read state retention circuit and method are disclosed. The read state retention circuit comprises a charge storage unit, charging unit, sensing circuit and state indicator. The charging circuit is coupled to the charge storage unit for charging the charge storage unit. The sensing circuit is coupled to the charge storage unit for sensing a voltage level of the charge storage unit. The state indicator is coupled to the sensing circuit for outputting an indication signal in response to the voltage level.
公开/授权文献
- US20080144358A1 Read state retention circuit and method 公开/授权日：2008-06-19
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