Invention Grant
- Patent Title: Method for manufacturing high temperature superconducting conductor
- Patent Title (中): 制造高温超导导体的方法
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Application No.: US11326895Application Date: 2006-01-06
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Publication No.: US07910155B2Publication Date: 2011-03-22
- Inventor: Hee-Gyoun Lee , Venkat Selvamanickam
- Applicant: Hee-Gyoun Lee , Venkat Selvamanickam
- Applicant Address: US NY Schenectady
- Assignee: Superpower, Inc.
- Current Assignee: Superpower, Inc.
- Current Assignee Address: US NY Schenectady
- Agency: Larson Newman & Abel, LLP
- Main IPC: B05D5/12
- IPC: B05D5/12 ; H01L39/24 ; C23C14/00

Abstract:
A method for manufacturing a high-temperature superconducting conductor includes translating an elongated substrate through a reactor. Further, a high temperature superconducting layer is formed on the substrate translating through the reactor by deposition of a reaction product of metalorganic precursor materials onto the substrate. Further, partial pressure of oxygen is monitored to indirectly monitor supply of metalorganic precursors into the reactor.
Public/Granted literature
- US20100009064A1 Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors Public/Granted day:2010-01-14
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