发明授权
- 专利标题： RF circuits including transistors having strained material layers
- 专利标题（中）： RF电路包括具有应变材料层的晶体管
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申请号： US12767671申请日： 2010-04-26
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公开(公告)号： US07906776B2公开(公告)日： 2011-03-15
- 发明人: Glyn Braithwaite , Richard Hammond , Matthew Currie
- 申请人： Glyn Braithwaite , Richard Hammond , Matthew Currie
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
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