发明授权
- 专利标题： Method of enhancing hole mobility
- 专利标题（中）： 增强空穴迁移率的方法
-
申请号： US11561496申请日： 2006-11-20
-
公开(公告)号： US07863653B2公开(公告)日： 2011-01-04
- 发明人: Henry K. Utomo , Judson R. Holt , Haining S. Yang
- 申请人： Henry K. Utomo , Judson R. Holt , Haining S. Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Gibb I.P. Law Firm, LLC
- 代理商 Ian D. McKinnon, Esq.
- 主分类号： H01L27/10
- IPC分类号： H01L27/10
摘要：
A semiconductor device is provided comprising an oxide layer over a first silicon layer and a second silicon layer over the oxide layer, wherein the oxide layer is between the first silicon layer and the second silicon layer. The first silicon layer and the second silicon layer comprise the same crystalline orientation. The device further includes a graded germanium layer on the first silicon layer, wherein the graded germanium layer contacts a spacer and the first silicon layer and does not contact the oxide layer. A lower portion of the graded germanium layer comprises a higher concentration of germanium than an upper portion of the graded germanium layer, wherein a top surface of the graded germanium layer lacks germanium.
公开/授权文献
- US20080116484A1 METHOD OF ENHANCING HOLE MOBILITY 公开/授权日：2008-05-22
信息查询
IPC分类:
