发明授权
- 专利标题： Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
- 专利标题（中）： 高氮化硅到氧化硅去除速率比的抛光组合物和方法
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申请号： US12364253申请日： 2009-02-02
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公开(公告)号： US07846842B2公开(公告)日： 2010-12-07
- 发明人: Phillip W. Carter , Timothy Johns
- 申请人： Phillip W. Carter , Timothy Johns
- 申请人地址： US IL Aurora
- 专利权人： Cabot Microelectronics Corporation
- 当前专利权人： Cabot Microelectronics Corporation
- 当前专利权人地址： US IL Aurora
- 代理商 Thomas E. Ombolt; Francis J. Koszyk; Steven D. Weseman
- 主分类号： H01L21/304
- IPC分类号： H01L21/304 ; B44C1/22
摘要：
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.
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