发明授权
US07843259B2 Field effect transistor circuit and method of operation of field effect transistor circuit for reducing thermal runaway
有权
场效应晶体管电路和场效应晶体管电路的运行方法，用于减少热失控
- 专利标题： Field effect transistor circuit and method of operation of field effect transistor circuit for reducing thermal runaway
- 专利标题（中）： 场效应晶体管电路和场效应晶体管电路的运行方法，用于减少热失控
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申请号： US11658224申请日： 2005-07-18
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公开(公告)号： US07843259B2公开(公告)日： 2010-11-30
- 发明人: John R. Cutter
- 申请人： John R. Cutter
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： GB0416174.1 20040720
- 国际申请： PCT/IB2005/052389 WO 20050718
- 国际公布： WO2006/011111 WO 20060202
- 主分类号： H01L25/00
- IPC分类号： H01L25/00
摘要：
A field transistor is divided into a number of cells (6) and includes a separate first gate line (20) connected to first transistor cells (8) and a separate second gate line (22) connected to second transistor cells (10). A drive circuit is used to drive all the cells (6) in a normal, saturated operations state but to drive only the second cells (10) in a linear operations state to reduce the number of cells used in the linear operations state.
公开/授权文献
- US20090212846A1 Insulated gate field effect transistors 公开/授权日：2009-08-27
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