发明授权
US07829404B2 Method of making a semiconductor memory array of floating gate memory cells with program/erase and select gates
有权
制造具有编程/擦除和选择栅极的浮动栅极存储单元的半导体存储器阵列的方法
- 专利标题： Method of making a semiconductor memory array of floating gate memory cells with program/erase and select gates
- 专利标题（中）： 制造具有编程/擦除和选择栅极的浮动栅极存储单元的半导体存储器阵列的方法
-
申请号： US11950345申请日： 2007-12-04
-
公开(公告)号： US07829404B2公开(公告)日： 2010-11-09
- 发明人: Pavel Klinger , Amitay Levi
- 申请人： Pavel Klinger , Amitay Levi
- 申请人地址： US CA Sunnyvale
- 专利权人： Silicon Storage Technology, Inc.
- 当前专利权人： Silicon Storage Technology, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： DLA Piper LLP (US)
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A memory device, and method of making and operating the same, including a substrate of semiconductor material of a first conductivity type, first and second spaced apart regions in the substrate of a second conductivity type with a channel region therebetween, an electrically conductive floating gate having a first portion disposed over and insulated from the channel region and a second portion disposed over and insulated from the first region and including a sharpened edge, an electrically conductive P/E gate having a first portion disposed over and insulated from the first region and a second portion extending up and over the floating gate second portion and insulated therefrom by a first layer of insulation material, and an electrically conductive select gate having a first portion disposed laterally adjacent to the floating gate and disposed over and insulated from the channel region.
公开/授权文献
信息查询
IPC分类:
