Invention Grant
- Patent Title: Semiconductor device with solid electrolyte switching
- Patent Title (中): 具有固体电解质开关的半导体器件
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Application No.: US12169818Application Date: 2008-07-09
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Publication No.: US07767997B2Publication Date: 2010-08-03
- Inventor: Yoshitaka Sasago , Motoyasu Terao , Norikatsu Takaura , Yoshihisa Fujisaki , Tomoyuki Kodama , Nobuyuki Arasawa
- Applicant: Yoshitaka Sasago , Motoyasu Terao , Norikatsu Takaura , Yoshihisa Fujisaki , Tomoyuki Kodama , Nobuyuki Arasawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2007-183478 20070712
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/08

Abstract:
A nonvolatile, sophisticated semiconductor device with a small surface area and a simple structure capable of switching connections between three or more electrodes. In a semiconductor device at least one of the electrodes contains atoms such as copper or silver in the solid electrolyte capable of easily moving within the solid electrolyte, and those electrodes face each other and applying a voltage switches the voltage on and off by generating or annihilating the conductive path between the electrodes. Moreover applying a voltage to a separate third electrode can annihilate the conductive path formed between two electrodes without applying a voltage to the two electrode joined by the conductive path.
Public/Granted literature
- US20090014708A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-01-15
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