发明授权
- 专利标题： Electrically alterable memory cell
- 专利标题（中）： 电可变存储单元
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申请号： US11120691申请日： 2005-05-02
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公开(公告)号： US07759719B2公开(公告)日： 2010-07-20
- 发明人: Chih-Hsin Wang
- 申请人： Chih-Hsin Wang
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
A nonvolatile memory cell is provided. The cell has a charge filter, a tunneling gate, a ballistic gate, a charge storage layer, a source, and a drain with a channel defined between the source and drain. The charge filter permits transporting of charge carriers of one polarity type from the tunneling gate through the blocking material and the ballistic gate to the charge storage layer while blocking the transport of charge carriers of an opposite polarity from the ballistic gate to the tunneling gate. Further embodiments of the present invention provide a cell having a charge filter, a supplier gate, a tunneling gate, a ballistic gate, a source, a drain, a channel, and a charge storage layer. The present invention further provides an energy band engineering method permitting the memory cell be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.
公开/授权文献
- US20060006454A1 Electrically alterable memory cell 公开/授权日：2006-01-12
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