发明授权
US07751139B1 Circuits, systems, and methods for calibration of bias across a magneto-resistive sensor 有权
用于校准跨越磁阻传感器的偏置的电路,系统和方法

  • 专利标题: Circuits, systems, and methods for calibration of bias across a magneto-resistive sensor
  • 专利标题(中): 用于校准跨越磁阻传感器的偏置的电路,系统和方法
  • 申请号: US11893163
    申请日: 2007-08-14
  • 公开(公告)号: US07751139B1
    公开(公告)日: 2010-07-06
  • 发明人: Thart Fah Voo
  • 申请人: Thart Fah Voo
  • 申请人地址: BE Hamilton
  • 专利权人: Marvell International Ltd.
  • 当前专利权人: Marvell International Ltd.
  • 当前专利权人地址: BE Hamilton
  • 主分类号: G11B5/03
  • IPC分类号: G11B5/03
Circuits, systems, and methods for calibration of bias across a magneto-resistive sensor
摘要:
Circuits, systems, and methods for generating and calibrating bias for a magneto-resistive (MR) sensor. The circuit relates to a preamplifier circuit in a magnetic storage system, including an amplifier having an input coupled to a first MR sensor node, a first feedback path comprising a feedback resistor, the path configured to receive an amplifier output from the amplifier and to provide a feedback output to the first MR sensor node, a charging circuit configured to generate a current, apply the current to the first MR sensor node, and sample a voltage between the first MR sensor node and a second MR sensor node to produce a sampled voltage, the charging circuit operating when the feedback path is activated, and a bias circuit configured to apply a bias voltage across the first and second MR sensor nodes and to adjust the bias voltage to match the sampled voltage, the bias circuit operating when the feedback path is deactivated. The present invention advantageously provides for fast and accurate calibration of bias across an MR sensor that compensates for bias error introduced by the feedback path.
信息查询
0/0