发明授权
- 专利标题: Multi-chip semiconductor device
- 专利标题(中): 多芯片半导体器件
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申请号: US12264970申请日: 2008-11-05
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公开(公告)号: US07745921B2公开(公告)日: 2010-06-29
- 发明人: Kazuhiko Hiranuma , Hiroshi Kuroda , Yoshiyuki Abe
- 申请人: Kazuhiko Hiranuma , Hiroshi Kuroda , Yoshiyuki Abe
- 申请人地址: JP Tokyo
- 专利权人: Renesas Electronics Corp.
- 当前专利权人: Renesas Electronics Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2005-103012 20050331
- 主分类号: H01L23/02
- IPC分类号: H01L23/02
摘要:
A semiconductor device includes semiconductor chips differing in withstand voltage or in noise immunity, such as a multi-chip module. The semiconductor device includes first and second semiconductor chips mounted over a package substrate which has bonding pads arranged along the edges. The first semiconductor chip includes bonding pads for analog signals, and the second semiconductor chip includes bonding pads for high-voltage signals. The edges along which the bonding pads for analog signals are arranged and the edges along which the bonding pads for high-voltage signals are arranged are disposed along mutually different edges of the package substrate. Adjoining of electrodes or wirings for high voltage signals and those for analog signals over the package substrate can be easily avoided, and SI deterioration can be thereby restrained.
公开/授权文献
- US20090065929A1 MULTI-CHIP SEMICONDUCTOR DEVICE 公开/授权日:2009-03-12
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