Invention Grant
- Patent Title: Management system of semiconductor fabrication apparatus, abnormality factor extraction method of semiconductor fabrication apparatus, and management method of the same
- Patent Title (中): 半导体制造装置的管理系统,半导体制造装置的异常因子提取方法及其管理方法
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Application No.: US11727824Application Date: 2007-03-28
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Publication No.: US07742834B2Publication Date: 2010-06-22
- Inventor: Hiroshi Matsushita , Junji Sugamoto , Masafumi Asano
- Applicant: Hiroshi Matsushita , Junji Sugamoto , Masafumi Asano
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2006-148600 20060529
- Main IPC: G06F19/00
- IPC: G06F19/00 ; G05B13/02 ; H01L21/00 ; G01N37/00

Abstract:
According to the present, there is proved a semiconductor fabrication apparatus management system having:a sensor which monitors and outputs a plurality of apparatus parameters of a semiconductor fabrication apparatus which fabricates a semiconductor device;a measurement unit which measures a dimensional value of the semiconductor device, and outputs the dimensional value as dimensional data;an apparatus parameter storage unit which stores the apparatus parameters;a dimensional data storage unit which stores the dimensional data;an apparatus parameter controller which calculates predicted dimensional data by extracting the dimensional data from the dimensional data storage unit, and controls at least one of the plurality of apparatus parameters on the basis of the predicted dimensional data; andan abnormality factor extraction unit which analyzes correlations between the controlled apparatus parameter and other apparatus parameters, and extracts an abnormal apparatus parameter on the basis of a calculated correlation coefficient.
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