发明授权
US07741610B2 CdTe/CdZnTe radiation imaging detector and high/biasing voltage means
有权
CdTe / CdZnTe辐射成像检测器和高/偏置电压装置
- 专利标题: CdTe/CdZnTe radiation imaging detector and high/biasing voltage means
- 专利标题(中): CdTe / CdZnTe辐射成像检测器和高/偏置电压装置
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申请号: US11933497申请日: 2007-11-01
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公开(公告)号: US07741610B2公开(公告)日: 2010-06-22
- 发明人: Konstantinos Spartiotis , Tom Schulman , Tuomas Pantsar
- 申请人: Konstantinos Spartiotis , Tom Schulman , Tuomas Pantsar
- 申请人地址: FI Espoo
- 专利权人: Oy Ajat Ltd.
- 当前专利权人: Oy Ajat Ltd.
- 当前专利权人地址: FI Espoo
- 代理机构: Young & Thompson
- 主分类号: H01L27/146
- IPC分类号: H01L27/146
摘要:
A CdTe or CdZnTe radiation imaging detector and high voltage bias part for applying a high voltage to the continuous electrode to ensure stable performance of the detector. The high voltage bias part includes conductors of >30 um diameter and preferably selected from a group of materials that do not oxidize easily or oxidize less than aluminium.
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