发明授权
US07741172B2 Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode
有权
正本征负（PIN）/负 - 内 - 内（NIP）二极管
- 专利标题： Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode
- 专利标题（中）： 正本征负（PIN）/负 - 内 - 内（NIP）二极管
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申请号： US11463613申请日： 2006-08-10
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公开(公告)号： US07741172B2公开(公告)日： 2010-06-22
- 发明人: Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
- 申请人： Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
- 申请人地址： GB Belfast, Northern Ireland
- 专利权人： Icemos Technology Ltd.
- 当前专利权人： Icemos Technology Ltd.
- 当前专利权人地址： GB Belfast, Northern Ireland
- 代理机构： Panitch Schwarze Belisario & Nadel LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234
摘要：
A positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode includes a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate is of a first conductivity. The PIN/NIP diode includes at least one trench formed in the first main surface which defines at least one mesa. The trench extends to a first depth position in the semiconductor substrate. The PIN/NIP diode includes a first anode/cathode layer proximate the first main surface and the sidewalls and the bottom of the trench. The first anode/cathode layer is of a second conductivity opposite to the first conductivity. The PIN/NIP diode includes a second anode/cathode layer proximate the second main surface, a first passivation material lining the trench and a second passivation material lining the mesa. The second anode/cathode layer is the first conductivity.
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