Invention Grant
- Patent Title: Highly linear bootstrapped switch with improved reliability
- Patent Title (中): 高度线性自举开关,可靠性提高
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Application No.: US12141099Application Date: 2008-06-18
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Publication No.: US07710164B1Publication Date: 2010-05-04
- Inventor: Bhupendra Sharma
- Applicant: Bhupendra Sharma
- Applicant Address: US CA Milpitas
- Assignee: Intersil Americas Inc.
- Current Assignee: Intersil Americas Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: G11C27/02
- IPC: G11C27/02

Abstract:
Circuits, methods, and apparatus that provide bootstrapped switches having improved reliability. One example improves the reliability of a discharge transistor connected to discharge the gate of a switch transistor by decreasing its operating voltage during the discharge. This example provides a discharge transistor having a first source-drain region connected to a gate of a switch transistor. Since the gate of the switch transistor can reach high voltages, if the discharge transistor's second source-drain region is instantaneously tied to ground when the switch's gate is discharged, the discharge transistor's reliability can be degraded due to hot-electron effects. Accordingly, instead of being connected to ground—or an intermediate node that quickly reaches the ground potential during gate discharge—the second source-drain region of the discharge transistor is coupled to an intermediate node that discharges to ground at a slower rate.
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