发明授权
- 专利标题: Semiconductor device preventing recovery breakdown and manufacturing method thereof
- 专利标题(中): 防止恢复破坏的半导体装置及其制造方法
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申请号: US11617863申请日: 2006-12-29
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公开(公告)号: US07705398B2公开(公告)日: 2010-04-27
- 发明人: Mitsuru Kaneda , Hideki Takahashi , Yoshifumi Tomomatsu
- 申请人: Mitsuru Kaneda , Hideki Takahashi , Yoshifumi Tomomatsu
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2006-285863 20061020
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
A second impurity region is surrounded by a first impurity region at a first main surface. A third impurity region of the first main surface sandwiches the second impurity region with the first impurity region. Fourth and fifth impurity regions of a second main surface sandwich the first impurity region with the second impurity region. A control electrode layer is opposite to the second impurity region with an insulating film interposed. That portion of the second main surface which is opposite to the portion of the first main surface where the first impurity region is formed surrounds the regions for forming the fourth and fifth impurity regions of the second main surface, and it is a region of the first conductivity type or a region of the second conductivity type having impurity concentration not higher than that of the first impurity region.
公开/授权文献
- US20080093697A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2008-04-24
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