Invention Grant
- Patent Title: Semiconductor device and optical apparatus
- Patent Title (中): 半导体装置及光学装置
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Application No.: US11982930Application Date: 2007-11-06
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Publication No.: US07700955B2Publication Date: 2010-04-20
- Inventor: Yasuaki Kuwata , Hideo Nakayama , Ryoji Ishii , Kayoko Nakamura
- Applicant: Yasuaki Kuwata , Hideo Nakayama , Ryoji Ishii , Kayoko Nakamura
- Applicant Address: JP Tokyo
- Assignee: Fuji Xerox Co., Ltd.
- Current Assignee: Fuji Xerox Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Fildes & Outland, P.C.
- Priority: JP2007-067152 20070315
- Main IPC: H01L29/26
- IPC: H01L29/26 ; H01L27/15 ; H01L29/267 ; G02B6/26 ; G02B6/36 ; H01S5/00 ; H01S3/20 ; H01S3/08
Abstract:
A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.
Public/Granted literature
- US20080224167A1 Semiconductor device and optical apparatus Public/Granted day:2008-09-18
Information query
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