发明授权
US07692178B2 Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof
有权
非易失性存储元件,非易失性存储装置及其制造方法
- 专利标题: Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof
- 专利标题(中): 非易失性存储元件,非易失性存储装置及其制造方法
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申请号: US12281034申请日: 2007-03-06
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公开(公告)号: US07692178B2公开(公告)日: 2010-04-06
- 发明人: Yoshio Kawashima , Takeshi Takagi , Takumi Mikawa , Zhiqiang Wei
- 申请人: Yoshio Kawashima , Takeshi Takagi , Takumi Mikawa , Zhiqiang Wei
- 申请人地址: JP Osaka
- 专利权人: Panasonic Corporation
- 当前专利权人: Panasonic Corporation
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2006-062316 20060308
- 国际申请: PCT/JP2007/054277 WO 20070306
- 国际公布: WO2007/102483 WO 20070913
- 主分类号: H01L45/00
- IPC分类号: H01L45/00
摘要:
A lower electrode layer 2, an upper electrode layer 4 formed above the lower electrode layer 2, and a metal oxide thin film layer 3 formed between the lower electrode layer 2 and the upper electrode layer 4 are provided. The metal oxide thin film layer 3 includes a first region 3a whose value of resistance increases or decreases by an electric pulse that is applied between the lower electrode layer 2 and the upper electrode layer 4 and a second region 3b arranged around the first region 3a and having a larger content of oxygen than the first region 3a, wherein the lower and upper electrode layers 2 and 4 and at least a part of the first region 3a are arranged so as to overlap as viewed from the direction of the thickness of the first region 3a.
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