发明授权
US07692178B2 Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof 有权
非易失性存储元件,非易失性存储装置及其制造方法

Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof
摘要:
A lower electrode layer 2, an upper electrode layer 4 formed above the lower electrode layer 2, and a metal oxide thin film layer 3 formed between the lower electrode layer 2 and the upper electrode layer 4 are provided. The metal oxide thin film layer 3 includes a first region 3a whose value of resistance increases or decreases by an electric pulse that is applied between the lower electrode layer 2 and the upper electrode layer 4 and a second region 3b arranged around the first region 3a and having a larger content of oxygen than the first region 3a, wherein the lower and upper electrode layers 2 and 4 and at least a part of the first region 3a are arranged so as to overlap as viewed from the direction of the thickness of the first region 3a.
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