发明授权
- 专利标题： Hemi-spherical structure and method for fabricating the same
- 专利标题（中）： 半球形结构及其制造方法
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申请号： US12048006申请日： 2008-03-13
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公开(公告)号： US07691696B2公开(公告)日： 2010-04-06
- 发明人: Ming-Chyi Liu , Chi-Hsin Lo
- 申请人： Ming-Chyi Liu , Chi-Hsin Lo
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Muncy, Geissler, Olds & Lowe, PLLC
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234
摘要：
Hemi-spherical structure and method for fabricating the same. A device includes discrete pillar regions on a substrate, and a pattern layer on the discrete support structures and the substrate. The pattern layer has hemi-spherical film regions on the discrete support structures respectively, and planarized portions on the substrate between the hemi-spherical film regions. Each of the hemi-spherical film regions in a position corresponding to each of the support structures serves as a hemi-spherical structure.
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