发明授权
- 专利标题: Plasma processing apparatus
- 专利标题(中): 等离子体处理装置
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申请号: US10929439申请日: 2004-08-31
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公开(公告)号: US07674351B2公开(公告)日: 2010-03-09
- 发明人: Akitaka Makino , Hideki Kihara , Susumu Tauchi
- 申请人: Akitaka Makino , Hideki Kihara , Susumu Tauchi
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2004-064638 20040308
- 主分类号: C23F1/00
- IPC分类号: C23F1/00 ; H01L21/306
摘要:
A vacuum processing apparatus that includes an inner wall member disposed inside of an outer side wall member of a vacuum container, the inner wall member surrounding a side of a sample stand on which a sample to be processed is placed and facing to a plasma generated in a chamber inside of the inner wall member. The apparatus also includes an upper member arranged in the vacuum chamber above a flange portion of the inner wall member, contacting with an upper surface of the flange portion and transmitting a force pressing downwardly in a state where the inside of the vacuum container is reduced in pressure. The inner wall member is thermally connected with a temperature adjusting device which controls a temperature of the inner wall member through the upper surface of the flange portion and the upper member.
公开/授权文献
- US20050193953A1 Plasma processing apparatus 公开/授权日:2005-09-08
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