发明授权
- 专利标题: High frequency multilayer bandpass filter
- 专利标题(中): 高频多层带通滤波器
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申请号: US11697025申请日: 2007-04-05
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公开(公告)号: US07671706B2公开(公告)日: 2010-03-02
- 发明人: Tetsuo Taniguchi
- 申请人: Tetsuo Taniguchi
- 申请人地址: JP Kyoto
- 专利权人: Murata Manufacturing Co., Ltd
- 当前专利权人: Murata Manufacturing Co., Ltd
- 当前专利权人地址: JP Kyoto
- 代理机构: Keating & Bennett, LLP
- 优先权: JP2006-112263 20060414; JP2006-197214 20060719
- 主分类号: H01P1/20
- IPC分类号: H01P1/20
摘要:
In a multilayer bandpass filter, capacitances are produced between a ground electrode provided in a ground electrode formation layer and capacitor electrodes provided in a capacitor electrode formation layer. A plurality of inductor electrodes are defined by via-electrodes and line electrodes such that loop planes of inductor electrodes at least partially overlap each other when seen in a direction in which the inductor electrodes are arranged. The direction of the loop of the inductor electrode of the LC parallel resonator located (at a first stage) at an input end is set to be opposite to the direction of the loop of the inductor electrodes of the LC parallel resonator (at a second stage) adjacent to the inductor electrode of the LC parallel resonator located at the input end. Similarly, the direction of the loop of the inductor electrode of the LC parallel resonator located (at a fifth stage) at an output end is set to be opposite to the direction of the loop of the inductor electrodes of the LC parallel resonator (at a fourth stage) adjacent to the inductor electrode of the LC parallel resonator located at the output end.
公开/授权文献
- US20070241839A1 HIGH FREQUENCY MULTILAYER BANDPASS FILTER 公开/授权日:2007-10-18
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