发明授权
- 专利标题： Method of manufacturing CMOS image sensor
- 专利标题（中）： CMOS图像传感器的制造方法
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申请号： US11948808申请日： 2007-11-30
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公开(公告)号： US07659186B2公开(公告)日： 2010-02-09
- 发明人: Sun Kyung Bang
- 申请人： Sun Kyung Bang
- 申请人地址： KR Seoul
- 专利权人： Dongbu Hitek Co., Ltd.
- 当前专利权人： Dongbu Hitek Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： Workman Nydegger
- 优先权： KR10-2006-0137362 20061229
- 主分类号： H01L21/425
- IPC分类号： H01L21/425
摘要：
A method for manufacturing the CMOS image sensor comprising forming an epitaxial layer provided with a plurality of photo diodes on a semiconductor substrate, coating a first photo resist on the epitaxial layer and performing a patterning process on the first photo resist using a predetermined reference value in order to form a first photo resist pattern, coating a second photo resist on the epitaxial layer and first photo resist pattern and performing a patterning process for the second photo resist in order to form the second photo resist pattern on the first photo resist pattern; and forming a well area of a pixel area by performing a dopant implantation process using a mask pattern including the first photo resist pattern and the second photo resist pattern.
公开/授权文献
- US20080160666A1 METHOD OF MANUFACTURING CMOS IMAGE SENSOR 公开/授权日：2008-07-03
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