发明授权
- 专利标题： Semiconductor laser device which is capable of stably emitting short-wavelength laser light
- 专利标题（中）： 能够稳定地发射短波长激光的半导体激光装置
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申请号： US11569683申请日： 2005-06-02
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公开(公告)号： US07653099B2公开(公告)日： 2010-01-26
- 发明人: Yoshiaki Hasegawa , Toshiya Yokogawa , Hiroyoshi Yajima
- 申请人： Yoshiaki Hasegawa , Toshiya Yokogawa , Hiroyoshi Yajima
- 申请人地址： JP Kadoma
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Kadoma
- 代理机构： Renner, Otto, Boisselle & Sklar, LLP
- 优先权： JP2004-164061 20040602
- 国际申请： PCT/JP2005/010129 WO 20050602
- 国际公布： WO2005/119862 WO 20051215
- 主分类号： H01S3/04
- IPC分类号： H01S3/04 ; H01L23/45
摘要：
A semiconductor laser device according to the present invention includes: a semiconductor laser chip 1 for emitting laser light; a stem 3, 4 for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem 3, 4, for supplying power to the semiconductor laser chip; and a cap 5 having an optical window 6 which transmits laser light and being affixed to the stem 3, 4 so as to cover the semiconductor laser chip 1. Between the stem 3, 4 and the terminal electrodes 7, this device includes insulation glass 8, which does not release silicon fluoride gas when heated to a temperature of no less than 700° C. and no more than 850° C.
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