A lithography exposure device is provided which includes a mounting device for the layer sensitive to light, an exposure unit with several laser radiation sources, an optical focusing means associated with the laser radiation sources, a movement unit for generating a relative movement between the optical focusing means and the mounting device, and a control for controlling intensity and position of exposure spots so that exposed structures which are as precisely structured as possible can be produced. A laser radiation field propagating in the direction of the light-sensitive layer generates each of the exposure spots from respective focal points and has a power density which leads in the conversion area in the light-sensitive layer to formation of a channel penetrating the light-sensitive layer with an index of refraction increased in relation to its surroundings by the Kerr effect and which guides the laser radiation field in a spatially limited manner.