发明授权
- 专利标题： Land patterns for a semiconductor stacking structure and method therefor
- 专利标题（中）： 半导体堆叠结构的焊盘图案及其方法
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申请号： US11367171申请日： 2006-03-03
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公开(公告)号： US07652361B1公开(公告)日： 2010-01-26
- 发明人: Akito Yoshida , Mahmoud Dreiza , James Turner
- 申请人： Akito Yoshida , Mahmoud Dreiza , James Turner
- 申请人地址： US AZ Chandler
- 专利权人： Amkor Technology, Inc.
- 当前专利权人： Amkor Technology, Inc.
- 当前专利权人地址： US AZ Chandler
- 代理机构： Weiss & Moy, P.C.
- 主分类号： H01L23/02
- IPC分类号： H01L23/02
摘要：
A semiconductor device has a substrate. A semiconductor die is coupled to a first surface of the substrate. An encapsulate is placed over the semiconductor die. A first plurality of lands is formed on the first surface of the substrate around the encapsulate. A second plurality of lands is formed on a second surface of the substrate. A first group of the second plurality of lands has a pitch and a second group of the second plurality of lands has a pitch of a different length.
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