发明授权
- 专利标题: Nanotip capacitor
- 专利标题(中): 纳米电容器
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申请号: US11707712申请日: 2007-02-16
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公开(公告)号: US07645669B2公开(公告)日: 2010-01-12
- 发明人: Sheng Teng Hsu , Fengyan Zhang
- 申请人: Sheng Teng Hsu , Fengyan Zhang
- 申请人地址: US WA Camas
- 专利权人: Sharp Laboratories of America, Inc.
- 当前专利权人: Sharp Laboratories of America, Inc.
- 当前专利权人地址: US WA Camas
- 代理机构: Law Office of Gerald Maliszewski
- 代理商 Gerald Maliszewski
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A nanotip capacitor and associated fabrication method are provided. The method provides a bottom electrode and grows electrically conductive nanotips overlying the bottom electrode. An electrically insulating dielectric is deposited overlying the nanotips, and an electrically conductive top electrode is deposited overlying dielectric-covered nanotips. Typically, the dielectric is deposited by forming a thin layer of dielectric overlying the nanotips using an atomic layer deposition (ALD) process. In one aspect, the electrically insulating dielectric covering the nanotips forms a three-dimensional interface of dielectric-covered nanotips. Then, the electrically conductive top electrode overlying the dielectric-covered nanotips forms a three-dimensional top electrode interface, matching the first three-dimensional interface of the dielectric-covered nanotips.
公开/授权文献
- US20080197399A1 Nanotip capacitor 公开/授权日:2008-08-21
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