发明授权
- 专利标题: Anti-parallel magnetization layers in the free layers and magnetization layers of a differential sensor read head
- 专利标题(中): 反平行磁化层在自由层和磁化层中的差分传感器读头
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申请号: US11378824申请日: 2006-03-17
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公开(公告)号: US07643255B2公开(公告)日: 2010-01-05
- 发明人: Hardayal (Harry) Singh Gill
- 申请人: Hardayal (Harry) Singh Gill
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 主分类号: G11B5/39
- IPC分类号: G11B5/39
摘要:
One embodiment of the present invention is directed to a read head for a data storage device including a differential sensor for reading data from a data storage medium. The differential sensor includes a first and a second free layer. The magnetization of the free layers is anti-parallel. The read head also includes a first stabilization material disposed adjacent to the differential sensor. The first stabilization material includes a first hard magnet and a second hard magnet. The magnetization of the hard magnets is anti-parallel to each other. The read head also includes a second stabilization material disposed adjacent to the differential sensor. The second stabilization material includes a first hard magnet and a second hard magnet, wherein the magnetization of the hard magnets is anti-parallel to each other. The anti-parallel coupling of the first stabilization material and the second stabilization material enhances the anti-parallel magnetization of the free layers.
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