Invention Grant
US07643254B2 Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer
失效
具有包含非磁性金属层的自由层的隧道效应型磁传感器
- Patent Title: Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer
- Patent Title (中): 具有包含非磁性金属层的自由层的隧道效应型磁传感器
-
Application No.: US11671819Application Date: 2007-02-06
-
Publication No.: US07643254B2Publication Date: 2010-01-05
- Inventor: Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
- Applicant: Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
- Applicant Address: JP Tokyo
- Assignee: Alps Electric Co., Ltd.
- Current Assignee: Alps Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2006-355043 20061228
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 Å. Accordingly, a high resistance change rate (ΔR/R) can be obtained.
Public/Granted literature
- US20080158739A1 TUNNEL-EFFECT TYPE MAGNETIC SENSOR HAVING FREE LAYER INCLUDING NON-MAGNETIC METAL LAYER Public/Granted day:2008-07-03
Information query
IPC分类:
