发明授权
- 专利标题: Inductor structure
- 专利标题(中): 电感结构
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申请号: US11742388申请日: 2007-04-30
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公开(公告)号: US07642890B2公开(公告)日: 2010-01-05
- 发明人: Sheng-Yuan Lee
- 申请人: Sheng-Yuan Lee
- 申请人地址: TW Taipei Hsien
- 专利权人: VIA Technologies, Inc.
- 当前专利权人: VIA Technologies, Inc.
- 当前专利权人地址: TW Taipei Hsien
- 代理机构: J.C. Patents
- 优先权: TW96105237A 20070213
- 主分类号: H01F5/00
- IPC分类号: H01F5/00
摘要:
An inductor structure including a first winding turn and a second winding turn is provided. The first winding turn is disposed above a substrate. The second winding turn is disposed between the first winding turn and the substrate. One end of the second winding turn is grounded, and the other end of the second winding turn and the first winding turn are electrically connected in series. The first winding turn and the second winding turn form a three-dimensional helix structure above the substrate. The width of the second winding turn is greater than that of the first winding turn, and furthermore, the first winding turn is projected onto the second winding turn.
公开/授权文献
- US20080191829A1 INDUCTOR STRUCTURE 公开/授权日:2008-08-14
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