发明授权
- 专利标题： Cross-point memory array
- 专利标题（中）： 交叉点存储器阵列
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申请号： US11709631申请日： 2007-02-22
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公开(公告)号： US07622731B2公开(公告)日： 2009-11-24
- 发明人: Pantas Sutardja , Albert Wu
- 申请人： Pantas Sutardja , Albert Wu
- 申请人地址： BB St. Michael
- 专利权人： Marvell World Trade Ltd
- 当前专利权人： Marvell World Trade Ltd
- 当前专利权人地址： BB St. Michael
- 主分类号： H01L47/00
- IPC分类号： H01L47/00
摘要：
A circuit comprises a bulk silicon integrated circuit (IC). A first metallization layer is arranged adjacent to said bulk silicon IC. Phase change memory (PCM) is arranged adjacent to said first metallization layer and comprises a plurality of PCM cells each including a phase-change material, a heater that selectively heats said phase-change material, and a diode in series with said phase-change material.
公开/授权文献
- US20070215910A1 Cross-point memory array 公开/授权日：2007-09-20
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