Invention Grant
- Patent Title: Conductive silicon nitride materials and method for producing the same
- Patent Title (中): 导电氮化硅材料及其制造方法
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Application No.: US11664072Application Date: 2005-09-27
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Publication No.: US07612006B2Publication Date: 2009-11-03
- Inventor: Katsutoshi Komeya , Junichi Tatami , Takeshi Meguro , Tomofumi Katashima , Toru Wakihara
- Applicant: Katsutoshi Komeya , Junichi Tatami , Takeshi Meguro , Tomofumi Katashima , Toru Wakihara
- Applicant Address: JP Kanegawa
- Assignee: Yokohama TLO Company, Ltd.
- Current Assignee: Yokohama TLO Company, Ltd.
- Current Assignee Address: JP Kanegawa
- Agent Gary C Cohn PLLC
- Priority: JP2004-290328 20041001; JP2004-376116 20041227
- International Application: PCT/JP2005/017701 WO 20050927
- International Announcement: WO2006/038489 WO 20060413
- Main IPC: C04B35/584
- IPC: C04B35/584 ; C04B35/78

Abstract:
To provide a sintered silicon nitride with conductivity and densification, an oxide of titanium group elements, such as titanium oxide, hafnium oxide, zirconium oxide and the like, aluminum oxide and/or aluminum nitride is added as needed to silicon nitride-oxidant of rare-earth elements-aluminum oxide system or silicon nitride-oxide of rare-earth elements-magnesia system, and then specified quantity of carbon nonotube (CNT) is added to the above mixture. CNT generates silicon carbide after the reaction with contiguous or proximal silicon nitride and the like depending on the sintering duration at high temperature. Since silicon carbide is generated along with nanotubes, the silicon carbide functions as conductor with excellent heat resistance, corrosion resistance and the like.
Public/Granted literature
- US20080076657A1 Conductive Silicon Nitride Materials and Method for Producing the Same Public/Granted day:2008-03-27
Information query
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