A method of fabricating a static random access memory device includes selectively removing an insulating film and growing a single crystalline silicon layer using selective epitaxy growth, the single crystalline silicon layer being grown in a portion from which the insulating film is removed; recessing the insulating film; and depositing an amorphous silicon layer on the single crystalline silicon layer and the insulating film, such that the amorphous silicon layer partially surrounds a top surface and side surfaces of the single crystalline silicon layer.