Invention Grant
- Patent Title: Non-volatile memory cell with a hybrid access transistor
- Patent Title (中): 具有混合存取晶体管的非易失性存储单元
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Application No.: US11740939Application Date: 2007-04-27
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Publication No.: US07595237B2Publication Date: 2009-09-29
- Inventor: Xiaoyu Chen , Donghua Liu , Sung Mun Jung , Swee Tuck Woo , Rachel Low , Louis Lim , Siow Lee Chwa
- Applicant: Xiaoyu Chen , Donghua Liu , Sung Mun Jung , Swee Tuck Woo , Rachel Low , Louis Lim , Siow Lee Chwa
- Applicant Address: SG Singapore
- Assignee: Chartered Semiconductor Manufacturing, Ltd.
- Current Assignee: Chartered Semiconductor Manufacturing, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte Ltd
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A non-volatile memory cell includes an access and a storage transistor coupled in series. The memory cell is formed on a thin gate well tailored for transistors with thin gate dielectrics. The access transistor is a hybrid transistor which includes a gate with a thick gate dielectric layer formed on the thin gate well.
Public/Granted literature
- US20080266944A1 NON-VOLATILE MEMORY CELL WITH A HYBRID ACCESS TRANSISTOR Public/Granted day:2008-10-30
Information query
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