发明授权
- 专利标题： Naphthalene-based semiconductor materials and methods of preparing and use thereof
- 专利标题（中）： 基于萘的半导体材料及其制备和使用方法
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申请号： US11811902申请日： 2007-06-12
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公开(公告)号： US07569693B2公开(公告)日： 2009-08-04
- 发明人: Tobin J. Marks , Michael R. Wasielewski , Antonio Facchetti , Brooks A. Jones
- 申请人： Tobin J. Marks , Michael R. Wasielewski , Antonio Facchetti , Brooks A. Jones
- 申请人地址： US IL Evanston
- 专利权人： Northwestern University
- 当前专利权人： Northwestern University
- 当前专利权人地址： US IL Evanston
- 代理机构： K&L Gates LLP
- 主分类号： C07D471/02
- IPC分类号： C07D471/02 ; H01L21/20
摘要：
Provided are mono- and diimide naphthalene compounds for use in the fabrication of various device structures. In some embodiments, the naphthalene core of these compounds are mono-, di-, or tetra-substituted with cyano group(s) or other electron-withdrawing substituents or moieties. Such mono- and diimide naphthalene compounds also can be optionally N-substituted.
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