Invention Grant
US07527442B2 Process for forming resist pattern, and resist coating and developing apparatus
有权
用于形成抗蚀剂图案的方法，以及抗蚀涂层和显影装置
- Patent Title: Process for forming resist pattern, and resist coating and developing apparatus
- Patent Title (中): 用于形成抗蚀剂图案的方法，以及抗蚀涂层和显影装置
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Application No.: US11872055Application Date: 2007-10-15
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Publication No.: US07527442B2Publication Date: 2009-05-05
- Inventor: Hiroshi Yoshioka
- Applicant: Hiroshi Yoshioka
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2006-282386 20061017
- Main IPC: G03D5/00
- IPC: G03D5/00 ; G03C5/00 ; H01L21/00
Abstract:
A process for forming a resist pattern according to the invention is a process for forming a resist pattern in which a photoresist is coated on a first substrate, the coated photoresist is exposed to light of a predetermined pattern, and afterwards developing is performed, wherein in at least one of the processes of coating, exposing, and developing, whenever lots to which the first substrate belongs change, the atmosphere residing in the lot is changed.
Public/Granted literature
- US20080088808A1 PROCESS FOR FORMING RESIST PATTERN, AND RESIST COATING AND DEVELOPING APPARATUS Public/Granted day:2008-04-17
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