Invention Grant
- Patent Title: Solid capacitor and manufacturing method thereof
- Patent Title (中): 固体电容器及其制造方法
-
Application No.: US11274129Application Date: 2005-11-16
-
Publication No.: US07495891B2Publication Date: 2009-02-24
- Inventor: Shang Mei Lee , Ting Keng Lin , Yung Sheng Huang
- Applicant: Shang Mei Lee , Ting Keng Lin , Yung Sheng Huang
- Applicant Address: TW Taipei County
- Assignee: Ctech Corporation
- Current Assignee: Ctech Corporation
- Current Assignee Address: TW Taipei County
- Agency: Rosenberg, Klein & Lee
- Priority: TW94132142A 20050916
- Main IPC: H01G9/02
- IPC: H01G9/02

Abstract:
A solid capacitor and the manufacturing method thereof are disclosed. The solid capacitor consists of a dielectric layer and two electrodes. A plurality of holes formed by an opening process is disposed on surface of the dielectric layer. The two electrodes connect with the dielectric layer by the holes. By means of a plurality of high temperature volatile matters, the plurality of holes is formed on surface of the dielectric layer during sintered process. The holes are connected with the outside so as to increase surface area of the dielectric layer and further the capacity is increased. And the solid capacitor stores charge by physical means. Moreover, the solid capacitor can be stacked repeatedly to become a multilayer capacitor.
Public/Granted literature
- US20070063246A1 Solid capacitor and manufacturing method thereof Public/Granted day:2007-03-22
Information query