Invention Grant
- Patent Title: Photonic crystal sensors
- Patent Title (中): 光子晶体传感器
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Application No.: US10799020Application Date: 2004-03-11
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Publication No.: US07489846B2Publication Date: 2009-02-10
- Inventor: Annette Grot , Kai-Cheung Chow , Laura Wills Mirkarimi , Mihail M. Sigalas
- Applicant: Annette Grot , Kai-Cheung Chow , Laura Wills Mirkarimi , Mihail M. Sigalas
- Applicant Address: US CA Santa Clara
- Assignee: Agilent Technologies, Inc.
- Current Assignee: Agilent Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: G02B6/17
- IPC: G02B6/17

Abstract:
Photonic crystal sensors may be created from two and three dimensional photonic crystals by introducing defects. The localization of the optical field in the defect region affords the ability to sense small volumes of analyte.
Public/Granted literature
- US20050200942A1 Photonic crystal sensors Public/Granted day:2005-09-15
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