Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere

Invention Grant

US07482234B2 Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere 有权

Title translation: 制造金属氮氧化物薄膜的方法，其包括在含氮气氛中的金属氧化物膜的第一退火以形成金属氧氮化物膜和在氧化气氛中的金属氧氮化物膜的第二退火

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Patent Title: Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere
Patent Title (中): 制造金属氮氧化物薄膜的方法，其包括在含氮气氛中的金属氧化物膜的第一退火以形成金属氧氮化物膜和在氧化气氛中的金属氧氮化物膜的第二退火
Application No.: US10928045

Application Date: 2004-08-27
Publication No.: US07482234B2

Publication Date: 2009-01-27
Inventor: Kunihiko Iwamoto , Koji Tominaga , Toshihide Nabatame , Tomoaki Nishimura
Applicant: Kunihiko Iwamoto , Koji Tominaga , Toshihide Nabatame , Tomoaki Nishimura
Applicant Address: JP JP JP
Assignee: Rohm Co., Ltd.,Horiba, Ltd.,Renesas Technology Corp.
Current Assignee: Rohm Co., Ltd.,Horiba, Ltd.,Renesas Technology Corp.
Current Assignee Address: JP JP JP
Agency: Cantor Colburn LLP
Priority: JP2003-399459 20031128
Main IPC: H01L21/473
IPC: H01L21/473

Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere

Abstract:

After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.

Abstract(Chinese):

在清洁基板的表面之后，形成界面层或反扩散膜。在抗扩散膜上构建金属氧化物膜。在NH 3气氛中进行退火，以便在金属氧化物膜中扩散氮。金属氧化物膜的构建和氮的扩散重复几次，随后在O 2气氛中进行退火。通过在高于650℃的温度下在O 2气氛中退火该膜，可以控制金属氧化物膜中的漏电流。

Public/Granted literature

US20050116306A1 Metallic compound thin film and method of fabricating the same, semiconductor device including metallic compound thin film and method of fabricating the device Public/Granted day:2005-06-02

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
H01L21/471	.......无机层（H01L21/475，H01L21/4757优先）
H01L21/473	........由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层