Invention Grant
- Patent Title: Capacitor with nanotubes and method for fabricating the same
- Patent Title (中): 纳米管电容器及其制造方法
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Application No.: US11148057Application Date: 2005-06-07
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Publication No.: US07463476B2Publication Date: 2008-12-09
- Inventor: Eun-A Lee , Ho-Jin Cho , Young-Dae Kim , Jun-Soo Chang , Su-Jin Chae , Hai-Won Kim
- Applicant: Eun-A Lee , Ho-Jin Cho , Young-Dae Kim , Jun-Soo Chang , Su-Jin Chae , Hai-Won Kim
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2005-0027337 20050331
- Main IPC: H01G4/06
- IPC: H01G4/06

Abstract:
A capacitor with nanotubes and a method for fabricating the same are provided. The capacitor includes: a lower electrode including a patterned conductive layer and a plurality of nanotubes formed on the patterned conductive layer in the shape of whiskers without using a catalytic layer; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer. The method includes the steps of: forming a conductive layer for forming a lower electrode; forming a nanotube array including a plurality of nanotubes formed on the conductive layer without using a catalytic layer; forming a dielectric layer on the nanotube array; and forming an upper electrode on the dielectric layer.
Public/Granted literature
- US20060221548A1 Capacitor with nanotubes and method for fabricating the same Public/Granted day:2006-10-05
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