Invention Grant
- Patent Title: Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
- Patent Title (中): 与具有低接触电阻层的高介电常数材料兼容的电容器及其形成方法
-
Application No.: US11216415Application Date: 2005-08-30
-
Publication No.: US07402489B2Publication Date: 2008-07-22
- Inventor: Gurtej S. Sandhu , Pierre C. Fazan
- Applicant: Gurtej S. Sandhu , Pierre C. Fazan
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/8242
- IPC: H01L21/8242
Abstract:
A storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode including a barrier layer interposed between a conductive plug and an oxidation resistant layer. A layer of titanium silicide is fabricated to lie between the conductive plug and the oxidation resistant layer. An insulative layer protects the sidewalls of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant.
Public/Granted literature
Information query
IPC分类:
