发明授权
US07382656B2 Nonvolatile memory with program while program verify 有权
非易失性存储器,程序验证程序

Nonvolatile memory with program while program verify
摘要:
A page mode program sequence is described that includes first and second bias applying cycles. In the first cycle, a program bias is applied to a first part of a page of memory cells, while a program verify bias is applied to, and data is sensed from, a second part of the page. In this manner, a first part of the page is programmed, while a second part of the page is verified. This operation is followed by a second bias applying cycle, in which a program bias is applied to the second part of the page, while a program verify bias is applied to, and data is sensed from, the first part of the page.
公开/授权文献
信息查询
0/0