发明授权
- 专利标题： Organoelement resists for EUV lithography and methods of making the same
- 专利标题（中）： 有机体可抵抗EUV光刻及其制作方法
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申请号： US10800195申请日： 2004-03-12
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公开(公告)号： US07326514B2公开(公告)日： 2008-02-05
- 发明人: Junyan Dai , Christopher K. Ober , Lin Wang , Franco Cerrina , Paul Nealey
- 申请人： Junyan Dai , Christopher K. Ober , Lin Wang , Franco Cerrina , Paul Nealey
- 申请人地址： US NY Ithaca US WI Madison
- 专利权人： Cornell Research Foundation, Inc.,University of Wisconsin-Madison
- 当前专利权人： Cornell Research Foundation, Inc.,University of Wisconsin-Madison
- 当前专利权人地址： US NY Ithaca US WI Madison
- 代理机构： Myers Bigel Sibley & Sajovec
- 主分类号： G03C1/73
- IPC分类号： G03C1/73 ; G03F7/038 ; G03F7/039
摘要：
Resist compositions containing silicon, boron, or both silicon and boron may be used with ultra-violet lithography processes and extreme ultra-violet (EUV) lithography processes to increase the reactive ion etch resistance of the resist compositions, improve transmission of the resist materials, and to dope substrates.
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