发明授权
- 专利标题： Integrated circuit having features to limit substrate current
- 专利标题（中）： 集成电路具有限制衬底电流的特征
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申请号： US10902233申请日： 2004-07-29
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公开(公告)号： US07307334B2公开(公告)日： 2007-12-11
- 发明人: Brian D. Green
- 申请人： Brian D. Green
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 代理商 Peter Zawilski
- 主分类号： H01L31/113
- IPC分类号： H01L31/113
摘要：
A technique includes forming a first well in a substrate and forming a second well in the substrate. The first well is electrically isolated from the second well. The technique includes forming an element in the second well to limit current between the first well and the substrate.
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