Invention Grant
- Patent Title: Plasma processing method
- Patent Title (中): 等离子体处理方法
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Application No.: US11002265Application Date: 2004-12-03
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Publication No.: US07303998B2Publication Date: 2007-12-04
- Inventor: Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
- Applicant: Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.
Public/Granted literature
- US20050242060A1 Plasma processing method Public/Granted day:2005-11-03
Information query
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