Invention Grant
- Patent Title: Method for manufacturing varistor
- Patent Title (中): 压敏电阻制造方法
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Application No.: US10488232Application Date: 2003-07-04
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Publication No.: US07300620B2Publication Date: 2007-11-27
- Inventor: Ryo Teraura
- Applicant: Ryo Teraura
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Dickstein Shapiro LLP
- Priority: JP2002-216121 20020725
- International Application: PCT/JP03/08514 WO 20030704
- International Announcement: WO2004/012211 WO 20040205
- Main IPC: H01C17/00
- IPC: H01C17/00 ; C04B35/119

Abstract:
The raw material for a ZnO—Pr-based varistor is mixed with cobalt and potassium to prepare a ceramic raw material powder. Potassium, which is an alkali metal, is added in the form of KClO4, KHC4H4O6, PtCl6, or K3[Co(NO2)6]. The ceramic raw material powder is pulverized by a wet process while 0.1 to 5.0 wt % of polycarboxylate dispersant is added to the powder. Such a method can produce a reliable, high-quality varistor having excellent varistor characteristics, such as varistor voltage V1mA and insulation resistance IR, and less variation in these characteristics.
Public/Granted literature
- US20040195734A1 Method for manufacturing varistor and varistor Public/Granted day:2004-10-07
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