发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10797081申请日： 2004-03-11
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公开(公告)号： US07298020B2公开(公告)日： 2007-11-20
- 发明人: Syuji Asano , Yoshiaki Nakayama , Koji Eguchi
- 申请人： Syuji Asano , Yoshiaki Nakayama , Koji Eguchi
- 申请人地址： JP Kariya
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2003-097248 20030331
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A wire (12) is formed on an insulating film (10) on a semiconductor substrate (1). The wire (12) is covered by silicon nitride film (14), inorganic SOG film (20) and TEOS film (21). A thin film resistance element (30) of chromium silicon (CrSi) is formed on the upper surface of the TEOS film (21). The acute angle (taper angle) at which a line connecting the local maximum and minimum points of a step on the upper surface of the TEOS film (21) beneath the area where the thin film resistance element (30) is formed intersects to the surface of the substrate (1) is set to 10° or less.
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