Invention Grant
US07291283B2 Combined wet etching method for stacked films and wet etching system used for same
有权
用于堆叠薄膜和湿式蚀刻系统的湿法蚀刻方法
- Patent Title: Combined wet etching method for stacked films and wet etching system used for same
- Patent Title (中): 用于堆叠薄膜和湿式蚀刻系统的湿法蚀刻方法
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Application No.: US10704562Application Date: 2003-11-12
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Publication No.: US07291283B2Publication Date: 2007-11-06
- Inventor: Tadanori Uesugi , Shigeru Kimura
- Applicant: Tadanori Uesugi , Shigeru Kimura
- Applicant Address: JP Kanagawa
- Assignee: NEC LCD Technologies, Ltd.
- Current Assignee: NEC LCD Technologies, Ltd.
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2002-332954 20021115
- Main IPC: B44C1/22
- IPC: B44C1/22

Abstract:
A combined wet etching method for stacked films which is capable of performing etching processes in a collective manner while controlling an amount of side-etching on each of stacked films and of making uniform side edges. In the wet etching method, two or more types of etching methods are performed in combination, on stacked films containing first and second films being deposited sequentially on a substrate and each having a different film property. The two or more types of wet etching methods include, at least, a first wet etching method in which side-etching on the first film is facilitated more than side-etching on the second film and a second wet etching method in which side-etching on the second film is facilitated more than side-etching on the first film.
Public/Granted literature
- US20040104199A1 Combined wet etching method for stacked films and wet etching system used for same Public/Granted day:2004-06-03
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