Invention Grant
- Patent Title: Back-to-back NPN/PNP protection diodes
- Patent Title (中): 背对背NPN / PNP保护二极管
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Application No.: US11194449Application Date: 2005-08-02
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Publication No.: US07285827B1Publication Date: 2007-10-23
- Inventor: Yi He , Zhizheng Liu , Meng Ding , Wei Zheng
- Applicant: Yi He , Zhizheng Liu , Meng Ding , Wei Zheng
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity Snyder L.L.P.
- Main IPC: H01L23/62
- IPC: H01L23/62
Abstract:
A device includes a memory device and an NPN or PNP diode coupled to a word-line of the memory device. The NPN or PNP diode reduces device damage and performance impairment that may result from device charging by drawing charges away from the memory device.
Information query
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