Invention Grant
- Patent Title: Method and structure for reducing contact aspect ratios
- Patent Title (中): 减少接触长宽比的方法和结构
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Application No.: US11088311Application Date: 2005-03-23
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Publication No.: US07268072B2Publication Date: 2007-09-11
- Inventor: Scott J. Deboer , Vishnu K. Agarwal
- Applicant: Scott J. Deboer , Vishnu K. Agarwal
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens Olson & Bear LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763

Abstract:
An intermediate metal plug is used to raise the platform to which contact is to be made. In the illustrated process, a partial bit line plug is formed adjacent a stacked capacitor, and an interlevel dielectric formed over the capacitor. The bit line contact is completed by extending a via from the bit line, formed above the interlevel dielectric, down to the level of the intermediate plug, and the via is filled with metal. The height of the via to be filled is thus reduced by the height of the intermediate plug. In one embodiment, the intermediate plug is slightly shorter than an adjacent container-shaped capacitor. In another embodiment, the intermediate plug is about as high as an adjacent stud capacitor.
Public/Granted literature
- US20050164481A1 Method and structure for reducing contact aspect ratios Public/Granted day:2005-07-28
Information query
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